Polymeric memristor

In July 2008, Victor Erokhin and Marco P. Fontana, in Electrochemically controlled polymeric device: a memristor (and more) found two years ago,[24] claim to have developed a polymeric memristor before the titanium dioxide memristor more recently announced.

Juri H. Krieger and Stuart M. Spitzer publish a paper in the IEEE Proceeding 2004 Non-Volatile Memory Technology Symposium entitled "Non-traditional, Non-volatile Memory Based on Switching and Retention Phenomena in Polymeric Thin Films". This work describes the process of dynamic doping of polymer and inorganic dielectric-like materials in order to improve the switching characteristics and retention required to create functioning nonvolatile memory cells. Described is the use of a special passive layer between electrode and active thin films, which enhances the extraction of ions from the electrode. It is possible to use fast ion conductor as this passive layer, which allows to significantly decrease the ionic extraction field.